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產(chǎn)品中心> DIODES> Discrete> MOSFETs> DIOFET>


Part Number Product small description Config/ Polarity ESD Diodes Y/N V DS (V) V GS (±V) I DS @ T A = +25°C (A) P D @ T A = +25°C (W) R DS(ON) Max (mΩ) @ V GS (10V) R DS(ON) Max (mΩ) @ V GS (4.5V) C ISS Typ @ V DS = 15V (pF) Q G Typ @ V GS = 10V (pF) Package Outlines
DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N + Schottky N 30 12 12.7 1.54 12.5 14.8 1849 43 SO-8
DMG4712SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N + Schottky N 30 12 11.2 1.55 14 15.4 2296 46 SO-8
DMG4812SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N + Schottky N 30 12 8 1.54 15 18.5 1849 43 SO-8
DMG4932LSD ASYMETRICAL DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Dual N Channel N 30 12;25 9.5 1.19 15 18 1932;675 42;16 SO-8
DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N Channel N 30 20 16 0.89 10 15 1296 31.6 POWERDI3333-8
DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N Channel N 30 20 16 0.89 10 15 1296 31.6 POWERDI3333-8
DMS3014SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET N Channel N 30 12 10.2 1 13 14 2296 19.3 POWERDI3333-8
DMS3014SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N + Schottky N 30 12 10.4 1.55 13 14 2296 45.7 SO-8
DMS3015SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N + Schottky N 30 20 11 1.55 11.9 14.9 1276 30.6 SO-8
DMS3016SFG N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N Channel N 30 12 10.2 0.98 13 16 1886 44.6 POWERDI3333-8
DMS3016SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE N + Schottky N 30 12 9.8 1.54 13 16 1849 43 SO-8
DMS3017SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Dual N Channel N 30 20 10;7.2 1.79 12 15 1276;478.9 30.6;10.5 SO-8
DMS3019SSD ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Dual N Channel N 30 12;20 9;7 1.79 15 18 1932;478.9 42;10.5 SO-8