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產(chǎn)品中心> DIODES> Discrete> MOSFETs> H Bridge>


Part Number Product small description Type ESD Diodes Y/N V DS (V) V GS (±V) I DSA +25oC (A) P DW +25oC (W) R DS(ON) Max (mΩ) @ V GS (10V) R DS(ON) Max (mΩ) @ V GS (4.5V) C ISS Typ (pF) Q G Typ @ V GS = 10V (nc) Package Outlines
DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 30;-30 20 6;-4.2 1.5 25;50 40;80 11.7;11.4 SO-8
DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE - - 40;-40 20;-20 4.5;-3.7 1.5 45;65 58;100 SO-8
ZXMHC10A07N8 100V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 100;-100 20 1.1;-0.9 1.3 700;1000 900;1450 2.9;3.5 SO-8
ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 100;-100 20 1.4;-1.3 1.3 700;1000 900;1450 2.9;3.5 SM-8
ZXMHC3A01N8 30V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 30;-30 20 2.7;-2.1 1.3 125;210 180;330 3.9;5.2 SO-8
ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 30;-30 20 3.1;-2.3 1.7 120;210 180;330 3.9;5.2 SM-8
ZXMHC3F381N8 30V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 30;-30 20 5;-4.1 1.3 33;55 60;80 9;12.7 SO-8
ZXMHC6A07N8 60V SO8 COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 60;-60 20 1.8;-1.4 1.3 250;400 350;600 3.2;5.1 SO-8
ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE 2 x N;2 x P N 60;-60 20 1.8;-1.5 1.7 300;425 450;630 3.2;5.1 SM-8
ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE 4 x N N 60 20 1.8 1.7 300 450 3.2 SM-8